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  ? 1/6 table 1: main product characteristics i f(av) 2 x 60 a v rrm 600 v t j 150c v f (typ) 0.95 v t rr (max) 70 ns STTH120L06TV turbo 2 ultrafast high voltage rectifier table 3: absolute ratings (limiting values, per diode) symbol parameter value unit v rrm repetitive peak reverse voltage 600 v i f(rms) rms forward voltage 120 a i f(av) average forward current = 0.5 tc = 65c per diode 60 a i fsm surge non repetitive forward current tp = 10ms sinusoidal 500 a t stg storage temperature range -55 to + 150 c t j maximum operating junction temperature 150 c k1 k2 a2 a1 isotop STTH120L06TV1 a1 k1 a2 k2 september 2004 rev. 1 features and benefits ultrafast switching low reverse current low thermal resistance reduces switching & conduction losses description the STTH120L06TV, which is using st turbo 2 600v technology, is specially suited for use in switching power supplies, and industrial applications, as rectification and free-wheeling diode. table 2: order codes part number marking STTH120L06TV1 STTH120L06TV1
STTH120L06TV 2/6 table 4: thermal resistance table 5: static electrical characteristics (per diode) pulse test: * tp = 5 ms, < 2% ** tp = 380 s, < 2% to evaluate the conduction losses use the following equation: p = 0.93 x i f(av) + 0.0045 i f 2 (rms) table 6: dynamic characteristics (per diode) symbol parameter value (max). unit r th(j-c) junction to case per diode 0.98 c/w total 0.54 r th(c) coupling 0.1 c/w when the diodes 1 and 2 are used simultaneously: ? tj(diode 1) = p(diode 1) x r th(j-c) (per diode) + p(diode 2) x r th(c) symbol parameter test conditions min. typ max. unit i r * reverse leakage current t j = 25c v r = v rrm 50 a t j = 125c 50 500 v f ** forward voltage drop t j = 25c i f = 60a 1.55 v t j = 150c 0.95 1.2 symbol parameter test conditions min. typ max. unit t rr reverse recovery time t j = 25c i f = 0.5a irr = 0.25a i r =1a 70 ns i f = 1a di f /dt = 50 a/s v r =30v 75 105 i rm reverse recovery current t j = 125c i f = 60a v r = 400v di f /dt = 100 a/s 14 19 a t fr forward recovery time t j = 25c i f = 60a di f /dt = 200 a/s v fr = 1.1 x v fmax 500 ns v fp forward recovery voltage t j = 25c i f = 60a di f /dt = 200 a/s v fr = 1.1 x v fmax 3v
STTH120L06TV 3/6 figure 1: conduction losses versus average forward current (per diode) figure 2: forward voltage drop versus forward current (per diode) figure 3: relative variation of thermal impedance junction to case versus pulse duration figure 4: peak reverse recovery current versus di f /dt (typical values, per diode) figure 5: reverse recovery time versus di f /dt (typical values, per diode) figure 6: reverse recovery charges versus di f /dt (typical values, per diode) 0 20 40 60 80 100 120 140 0 102030405060708090100 p(w) t =tp/t tp = 0.05 i (a) f(av) = 1 = 0.5 = 0.2 = 0.1 0 20 40 60 80 100 120 140 160 180 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 i (a) fm t =150c (typical values) j t =25c (maximum values) j v (v) fm t =150c (maximum values) j 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 z/r th(j-c) th(j-c) t (s) p single pulse t =tp/t tp 0 10 20 30 40 50 60 0 50 100 150 200 250 300 350 400 450 500 i (a) rm di /dt(a/s) f i =2 x i ff(av) i=i ff(av) i =0.5 x i ff(av) v =400v t =125c r j 0 200 400 600 800 1000 1200 0 50 100 150 200 250 300 350 400 450 500 t (ns) rr di /dt(a/s) f i=i ff(av) i =0.5 x i ff(av) v =400v t =125c r j i =2 x i ff(av) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 100 200 300 400 500 q (c) rr i =2 x i ff(av) i=i ff(av) i =0.5 x i ff(av) v =400v t =125c r j di /dt(a/s) f
STTH120L06TV 4/6 figure 7: reverse recovery softness factor versus di f /dt (typical values, per diode) figure 8: relative variations of dynamic parameters versus junction temperature figure 9: transient peak forward voltage versus di f /dt (typical values, per diode) figure 10: forward recovery time versus di f /dt (typical values, per diode) figure 11: junction capacitance versus reverse voltage applied (typical values, per diode) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 50 100 150 200 250 300 350 400 450 500 s factor di /dt(a/s) f i< 2 xi t =125c ff(av) j v =400v r 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 i rm t rr s factor t (c) j i=i reference: t =125c ff(av) j v =400v r q rr 0 1 2 3 4 5 6 7 8 0 50 100 150 200 250 300 350 400 450 500 v (v) fp di /dt(a/s) f i=i t =125c ff(av) j 0 50 100 150 200 250 300 350 400 0 100 200 300 400 500 t (ns) fr di /dt(a/s) f i=i t =125c ff(av) j v =1.1 x v max. fr f 10 100 1000 1 10 100 1000 c(pf) v (v) r f=1mhz v =30mv t =25c osc rms j
STTH120L06TV 5/6 figure 12: isotop package mechanical data ref. dimensions millimeters inches min. max. min. max. a 11.80 12.20 0.465 0.480 a1 8.90 9.10 0.350 0.358 b 7.8 8.20 0.307 0.323 c 0.75 0.85 0.030 0.033 c2 1.95 2.05 0.077 0.081 d 37.80 38.20 1.488 1.504 d1 31.50 31.70 1.240 1.248 e 25.15 25.50 0.990 1.004 e1 23.85 24.15 0.939 0.951 e2 24.80 typ. 0.976 typ. g 14.90 15.10 0.587 0.594 g1 12.60 12.80 0.496 0.504 g2 3.50 4.30 0.138 0.169 f 4.10 4.30 0.161 0.169 f1 4.60 5.00 0.181 0.197 p 4.00 4.30 0.157 0.69 p1 4.00 4.40 0.157 0.173 s 30.10 30.30 1.185 1.193 table 7: ordering information epoxy meets ul94, v0 cooling method: by conduction (c) ordering type marking package weight base qty delivery mode STTH120L06TV1 STTH120L06TV1 isotop 27 g (without screws) 10 (with screws) tube table 8: revision history date revision description of changes 07-sep-2004 1 first issue
STTH120L06TV 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the cons equences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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